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W66BL6NBUAFJ TR - Winbond Electronics - Memory

W66BL6NBUAFJ TR

Winbond Electronics

2GB LPDDR4, X16, 1600MHZ, -40C~1

W66BL6NBUAFJ TR is a Memory manufactured by Winbond Electronics. 2GB LPDDR4, X16, 1600MHZ, -40C~1. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TC), voltage - supply 1.06V ~ 1.17V, 1.7V ~ 1.95V, package / case 200-WFBGA.

In Stock: 6,959

Product Attributes

AttributeValue
Product StatusNot For New Designs
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4
Memory Size2Gb (128M x 16)
Memory InterfaceLVSTL_11
Clock Frequency1.6 GHz
Write Cycle Time - Word, Page18ns
Access Time3.5 ns
Voltage - Supply1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature-40°C ~ 105°C (TC)
Mounting TypeSurface Mount
Package / Case200-WFBGA
Supplier Device Package200-WFBGA (10x14.5)

Frequently Asked Questions

W66BL6NBUAFJ TR is a Memory manufactured by Winbond Electronics. 2GB LPDDR4, X16, 1600MHZ, -40C~1

The mounting type of W66BL6NBUAFJ TR is Surface Mount.

The operating temperature range of W66BL6NBUAFJ TR is -40°C ~ 105°C (TC).

The supply voltage of W66BL6NBUAFJ TR is 1.06V ~ 1.17V, 1.7V ~ 1.95V.

The memory specification of W66BL6NBUAFJ TR is 2Gb (128M x 16).

Alternative Products

W66BL6NBUAFJ TR is Not For New Designs. Consider these compatible alternatives:

Part NumberManufacturerDescriptionMatch
AS4C128M16MD4V-062BAN Alliance Memory, Inc. IC DRAM 2GBIT LVSTL 200FBGA 100% View
IS46LQ16128AL-062TBLA2 ISSI, Integrated Silicon Solution Inc IC DRAM 2GBIT LVSTL 200TFBGA 100% View
IS46LQ16128A-062TBLA2 ISSI, Integrated Silicon Solution Inc IC DRAM 2GBIT LVSTL 200TFBGA 100% View
W66DP2RQQAFJ TR Winbond Electronics 8GB LPDDR4/4X, DDP, X32, 1600MHZ 100% View
W66CM2NQUAGJ Winbond Electronics 4GB LPDDR4X, DDP, X32, 1866MHZ, 94% View
W66CP2NQUAFJ Winbond Electronics 4GB LPDDR4, DDP, X32, 1600MHZ, - 85% View

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