IC DRAM 8GBIT PAR 96VFBGA
W638GU6QB-12 TR is a Memory manufactured by Winbond Electronics. IC DRAM 8GBIT PAR 96VFBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.283V ~ 1.45V, package / case 96-VFBGA.
In Stock: 8,627
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 8Gbit |
| Memory Organization | 512M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 96-VFBGA |
| Supplier Device Package | 96-VFBGA (7.5x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43TR16128CL-125KBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 100% | View |
| IS46TR81024BL-125KBLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 8GBIT PAR 78TWBGA | 100% | View |
| MT41K512M16VRN-107 AAT:P TR | Micron Technology Inc. | IC DRAM 8GBIT PARALLEL 96FBGA | 94% | View |
| IS46TR16256BL-107MBLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 4GBIT PAR 96TWBGA | 94% | View |
| CY7C109BN-20VCT | Rochester Electronics, LLC | STANDARD SRAM, 128KX8 | 68% | View |
| 7028L20PFGI | Renesas Electronics America Inc | IC SRAM 1MBIT PARALLEL 100TQFP | 68% | View |
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