4GB DDR3L 1.35V SDRAM, X16, 933M
W634GU6QB-11 is a Memory manufactured by Winbond Electronics. 4GB DDR3L 1.35V SDRAM, X16, 933M. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.283V ~ 1.45V, package / case 96-VFBGA.
In Stock: 2,822
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4Gb (256M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-VFBGA |
| Supplier Device Package | 96-VFBGA (7.5x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| NDL26PFI-9MIT TR | Insignis Technology Corporation | DDR3L 2GB X16 FBGA 7.5X13(X1.0) | 100% | View |
| IM4G16D3FDBG-107I | Intelligent Memory Ltd. | DDR3 4GB, 1.35V/1.5V, 256MX16, 9 | 100% | View |
| IS43TR16128CL-15HBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 86% | View |
| IS62LV256AL-20TLI-TR | ISSI, Integrated Silicon Solution Inc | IC SRAM 256KBIT PAR 28TSOP I | 76% | View |
| 71V016SA20BFI8 | Renesas Electronics America Inc | IC SRAM 1MBIT PARALLEL 48CABGA | 76% | View |
| 71V016SA20BFGI | Renesas Electronics America Inc | IC SRAM 1MBIT PARALLEL 48FBGA | 76% | View |
Submit your RFQ for W634GU6QB-11 and get a quote within 24 hours.
3J LIMITED
