2GB DDR3 SDRAM, X16, 933MHZ,T&R
W632GG6NB-11 TR is a Memory manufactured by Winbond Electronics. 2GB DDR3 SDRAM, X16, 933MHZ,T&R. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.425V ~ 1.575V, package / case 96-VFBGA.
In Stock: 6,376
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 2Gb (128M x 16) |
| Memory Interface | SSTL_15 |
| Clock Frequency | 933 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-VFBGA |
| Supplier Device Package | 96-VFBGA (7.5x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43TR16128DL-107MBL | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 99% | View |
| W631GG8NB-12 TR | Winbond Electronics | 1GB DDR3 SDRAM, X8, 800MHZ, T&R | 94% | View |
| W634GU8QB09I TR | Winbond Electronics | 4GB DDR3L 1.35V SDRAM, X8, 1066M | 94% | View |
| IS46TR16128CL-125KBLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 92% | View |
| AS4C64M8D3L-12BCN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 78FBGA | 91% | View |
| 70V09L20PFGI8 | Renesas Electronics America Inc | IC SRAM 1MBIT PARALLEL 100TQFP | 79% | View |
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3J LIMITED
