1GB DDR3L 1.35V SDRAM, X8, 800MH
W631GU8NB12I TR is a Memory manufactured by Winbond Electronics. 1GB DDR3L 1.35V SDRAM, X8, 800MH. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 95°C (TC), voltage - supply 1.283V ~ 1.45V, 1.425V ~ 1.575V, package / case 78-VFBGA.
In Stock: 2,000
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V, 1.425V ~ 1.575V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 78-VFBGA |
| Supplier Device Package | 78-VFBGA (8x10.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS46TR82560DL-125KBLA2-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 78TWBGA | 100% | View |
| IS43TR16640BL-125KBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 96TWBGA | 100% | View |
| IS43TR16128C-125KBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 99% | View |
| IS46TR81280C-125JBLA25 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 78TWBGA | 99% | View |
| MT41K64M16TW-107 AUT:J | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 96FBGA | 92% | View |
| IS43TR16256B-093NBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 4GBIT PARALLEL 96TWBGA | 87% | View |
Submit your RFQ for W631GU8NB12I TR and get a quote within 24 hours.
3J LIMITED
