1GB DDR3L 1.35V SDRAM, X8, 1066M
W631GU8NB-09 TR is a Memory manufactured by Winbond Electronics. 1GB DDR3L 1.35V SDRAM, X8, 1066M. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.283V ~ 1.45V, 1.425V ~ 1.575V, package / case 78-VFBGA.
In Stock: 5,502
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 1.066 GHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V, 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 78-VFBGA |
| Supplier Device Package | 78-VFBGA (8x10.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43TR16256B-107MBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 4GBIT PARALLEL 96TWBGA | 93% | View |
| MT41K1G8SN-107 IT:A TR | Micron Technology Inc. | IC DRAM 8GBIT PARALLEL 78FBGA | 93% | View |
| EM6HC16EWXC-12IH | Etron Technology, Inc. | 1GB (64MX16) DDR3. 96-BALL WINDO | 88% | View |
| IS46TR16256BL-125KBLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 4GBIT PARALLEL 96TWBGA | 88% | View |
| 7007L20JGI8 | Renesas Electronics America Inc | IC SRAM 256KBIT PARALLEL 68PLCC | 68% | View |
| 7007L20PFGI | Renesas Electronics America Inc | IC SRAM 256KBIT PARALLEL 80TQFP | 68% | View |
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