1GB DDR3L 1.35V SDRAM, X16, INDU
W631GU6NB11I is a Memory manufactured by Winbond Electronics. 1GB DDR3L 1.35V SDRAM, X16, INDU. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 95°C (TC), voltage - supply 1.283V ~ 1.45V, 1.425V ~ 1.575V, package / case 96-VFBGA.
In Stock: 78
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 1Gb (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V, 1.425V ~ 1.575V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-VFBGA |
| Supplier Device Package | 96-VFBGA (7.5x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT41K256M16TW-107 AAT:P | Micron Technology Inc. | IC DRAM 4GBIT PARALLEL 96FBGA | 100% | View |
| IS46TR16640CL-107MBLA2 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 96TWBGA | 100% | View |
| IS46TR16512S2DL-125KBLA2-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 8GBIT PARALLEL 96LWBGA | 94% | View |
| IS46TR16128C-125KBLA2-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 92% | View |
| IS46TR16640C-125JBLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 96TWBGA | 92% | View |
| IS46TR16640C-125JBLA2-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 96TWBGA | 92% | View |
Submit your RFQ for W631GU6NB11I and get a quote within 24 hours.
3J LIMITED
