IC DRAM 1GBIT PARALLEL 96VFBGA
W631GG6MB12I TR is a Memory manufactured by Winbond Electronics. IC DRAM 1GBIT PARALLEL 96VFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 95°C (TC), voltage - supply 1.425V ~ 1.575V, package / case 96-VFBGA.
In Stock: 7,067
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 1Gb (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 20 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-VFBGA |
| Supplier Device Package | 96-VFBGA (7.5x13) |
W631GG6MB12I TR is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AS4C64M16D3B-12BINTR | Alliance Memory, Inc. | IC DRAM 1GBIT PARALLEL 96FBGA | 100% | View |
| IS46TR16640C-125JBLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 96TWBGA | 100% | View |
| IS43TR16640CL-107MBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 96TWBGA | 91% | View |
| IS46TR16128C-15HBLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 91% | View |
| MT41K256M16TW-107 XIT:P TR | Micron Technology Inc. | IC DRAM 4GBIT PARALLEL 96FBGA | 91% | View |
| IS43TR82560BL-15HBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 78TWBGA | 89% | View |
Submit your RFQ for W631GG6MB12I TR and get a quote within 24 hours.
3J LIMITED
