1G-BIT NAND FLASH, 3V, 4-BIT ECC
W29N01HVBINF TR is a Memory manufactured by Winbond Electronics. 1G-BIT NAND FLASH, 3V, 4-BIT ECC. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 63-VFBGA.
In Stock: 2,469
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 20 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT29F1G08ABAFAWP-AAT:F TR | Micron Technology Inc. | IC FLASH 1GBIT PARALLEL 48TSOP I | 95% | View |
| MT29F2G08ABAGAWP-AAT:G TR | Micron Technology Inc. | IC FLASH 2GBIT PARALLEL 48TSOP I | 95% | View |
| MX30LF1GE8AB-XKI | Macronix | IC FLASH 1GBIT PARALLEL 63VFBGA | 95% | View |
| MT29F1G08ABAFAWP-AAT:F | Micron Technology Inc. | IC FLASH 1GBIT PARALLEL 48TSOP I | 95% | View |
| CY14B108L-ZS20XI | Infineon Technologies | IC NVSRAM 8MBIT PAR 44TSOP II | 95% | View |
| NV25080DTVLT3G | onsemi | IC EEPROM 8KBIT SPI 20MHZ 8TSSOP | 57% | View |
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