SILICON CARBIDE POWER DIODE
WNSC08650T6J is a Diodes - Rectifiers - Single manufactured by WeEn Semiconductors. SILICON CARBIDE POWER DIODE. Key specifications: mounting type Surface Mount, package / case 4-VSFN Exposed Pad.
In Stock: 2,876
| Attribute | Value |
|---|---|
| Product Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr, F | 267pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 4-VSFN Exposed Pad |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C (Max) |
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3J LIMITED
