SILICON CARBIDE POWER DIODE
NXPSC16650B6J is a Diodes - Rectifiers - Single manufactured by WeEn Semiconductors. SILICON CARBIDE POWER DIODE. Key specifications: mounting type Surface Mount, package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
In Stock: 3,194
| Attribute | Value |
|---|---|
| Product Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 16A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 16 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
| Capacitance @ Vr, F | 534pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 175°C (Max) |
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3J LIMITED
