3J LIMITED
NXPSC126506Q
SILICON CARBIDE POWER DIODE
NXPSC126506Q is a Diodes - Rectifiers - Single manufactured by WeEn Semiconductors. SILICON CARBIDE POWER DIODE. Key specifications: mounting type Through Hole, package / case TO-220-2.
In Stock: 2,984
Product Attributes
| Attribute | Value |
|---|---|
| Product Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 80 µA @ 650 V |
| Capacitance @ Vr, F | 380pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
Frequently Asked Questions
NXPSC126506Q is a Diodes - Rectifiers - Single manufactured by WeEn Semiconductors. SILICON CARBIDE POWER DIODE
The mounting type of NXPSC126506Q is Through Hole.
The package type of NXPSC126506Q is TO-220-2.
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