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SUG90090E-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SUG90090E-GE3

Vishay Siliconix

MOSFET N-CH 200V 100A TO247AC

SUG90090E-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 200V 100A TO247AC. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3.

In Stock: 33

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs129 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5220 pF @ 100 V
FET Feature-
Power Dissipation (Max)395W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

Frequently Asked Questions

SUG90090E-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 200V 100A TO247AC

The mounting type of SUG90090E-GE3 is Through Hole.

The operating temperature range of SUG90090E-GE3 is -55°C ~ 175°C (TJ).

The package type of SUG90090E-GE3 is TO-247-3.

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