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SQD10N30-330H_4GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SQD10N30-330H_4GE3

Vishay Siliconix

N-CHANNEL 300-V (D-S) 175C MOSFE

SQD10N30-330H_4GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 300-V (D-S) 175C MOSFE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 4,678

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs330mOhm @ 14A, 10V
Vgs(th) (Max) @ Id4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2190 pF @ 25 V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Frequently Asked Questions

SQD10N30-330H_4GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 300-V (D-S) 175C MOSFE

The mounting type of SQD10N30-330H_4GE3 is Surface Mount.

The operating temperature range of SQD10N30-330H_4GE3 is -55°C ~ 175°C (TJ).

The package type of SQD10N30-330H_4GE3 is TO-252-3, DPak (2 Leads + Tab), SC-63.

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