MOSFET N-CH 25V 60A PPAK1212-8S
SISS28DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 25V 60A PPAK1212-8S. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8S.
In Stock: 26
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.52mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Vgs (Max) | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 3640 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8S |
| Package / Case | PowerPAK® 1212-8S |
Submit your RFQ for SISS28DN-T1-GE3 and get a quote within 24 hours.
3J LIMITED
