MOSFET P-CH 20V 15.4A/25A PPAK
SISH407DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 15.4A/25A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8SH.
In Stock: 15,000
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 15.4A (Ta), 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 15.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 93.8 nC @ 8 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2760 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 33W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8SH |
| Package / Case | PowerPAK® 1212-8SH |
Submit your RFQ for SISH407DN-T1-GE3 and get a quote within 24 hours.
3J LIMITED
