MOSFET N-CH 30V 11.3A PPAK
SISH112DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 11.3A PPAK. Key specifications: mounting type Surface Mount, operating temperature -50°C ~ 150°C (TJ), package / case PowerPAK® 1212-8SH.
In Stock: 91
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 17.8A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 2610 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8SH |
| Package / Case | PowerPAK® 1212-8SH |
Submit your RFQ for SISH112DN-T1-GE3 and get a quote within 24 hours.
3J LIMITED
