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SISA24DN-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SISA24DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 60A PPAK1212-8

SISA24DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 25V 60A PPAK1212-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8.

In Stock: 1,197

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 4.5 V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds2650 pF @ 10 V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

Frequently Asked Questions

SISA24DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 25V 60A PPAK1212-8

The mounting type of SISA24DN-T1-GE3 is Surface Mount.

The operating temperature range of SISA24DN-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SISA24DN-T1-GE3 is PowerPAK® 1212-8.

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