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SISA01DN-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SISA01DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 22.4A/60A PPAK

SISA01DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 30V 22.4A/60A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8.

In Stock: 10

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C22.4A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Vgs (Max)+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds3490 pF @ 15 V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

Frequently Asked Questions

SISA01DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 30V 22.4A/60A PPAK

The mounting type of SISA01DN-T1-GE3 is Surface Mount.

The operating temperature range of SISA01DN-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SISA01DN-T1-GE3 is PowerPAK® 1212-8.

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