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SIS407DN-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SIS407DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 25A PPAK1212-8

SIS407DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 25A PPAK1212-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8.

In Stock: 4,372

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs9.5mOhm @ 15.3A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs93.8 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2760 pF @ 10 V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

Frequently Asked Questions

SIS407DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 25A PPAK1212-8

The mounting type of SIS407DN-T1-GE3 is Surface Mount.

The operating temperature range of SIS407DN-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SIS407DN-T1-GE3 is PowerPAK® 1212-8.

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