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SIRC04DP-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SIRC04DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

SIRC04DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 60A PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

In Stock: 1,028

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.45mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds2850 pF @ 15 V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

Frequently Asked Questions

SIRC04DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 60A PPAK SO-8

The mounting type of SIRC04DP-T1-GE3 is Surface Mount.

The operating temperature range of SIRC04DP-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SIRC04DP-T1-GE3 is PowerPAK® SO-8.

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