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SIR182DP-T1-RE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SIR182DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 60V 60A PPAK SO-8

SIR182DP-T1-RE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 60V 60A PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

In Stock: 1,232

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3250 pF @ 30 V
FET Feature-
Power Dissipation (Max)69.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

Frequently Asked Questions

SIR182DP-T1-RE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 60V 60A PPAK SO-8

The mounting type of SIR182DP-T1-RE3 is Surface Mount.

The operating temperature range of SIR182DP-T1-RE3 is -55°C ~ 150°C (TJ).

The package type of SIR182DP-T1-RE3 is PowerPAK® SO-8.

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