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SIHW47N60E-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SIHW47N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 47A TO247AD

SIHW47N60E-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 600V 47A TO247AD. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-3P-3 Full Pack.

In Stock: 287

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs64mOhm @ 24A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs220 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9620 pF @ 100 V
FET Feature-
Power Dissipation (Max)357W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD
Package / CaseTO-3P-3 Full Pack

Frequently Asked Questions

SIHW47N60E-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 600V 47A TO247AD

The mounting type of SIHW47N60E-GE3 is Through Hole.

The operating temperature range of SIHW47N60E-GE3 is -55°C ~ 150°C (TJ).

The package type of SIHW47N60E-GE3 is TO-3P-3 Full Pack.

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