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SIHS90N65E-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SIHS90N65E-GE3

Vishay Siliconix

E SERIES POWER MOSFET SUPER-247,

SIHS90N65E-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. E SERIES POWER MOSFET SUPER-247,. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-274AA.

In Stock: 508

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C87A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs29mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs591 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds11826 pF @ 100 V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageSUPER-247™ (TO-274AA)
Package / CaseTO-274AA

Frequently Asked Questions

SIHS90N65E-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. E SERIES POWER MOSFET SUPER-247,

The mounting type of SIHS90N65E-GE3 is Through Hole.

The operating temperature range of SIHS90N65E-GE3 is -55°C ~ 150°C (TJ).

The package type of SIHS90N65E-GE3 is TO-274AA.

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