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SIHA21N80AEF-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SIHA21N80AEF-GE3

Vishay Siliconix

EF SERIES POWER MOSFET WITH FAST

SIHA21N80AEF-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. EF SERIES POWER MOSFET WITH FAST. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

In Stock: 975

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1511 pF @ 100 V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

Frequently Asked Questions

SIHA21N80AEF-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. EF SERIES POWER MOSFET WITH FAST

The mounting type of SIHA21N80AEF-GE3 is Through Hole.

The operating temperature range of SIHA21N80AEF-GE3 is -55°C ~ 150°C (TJ).

The package type of SIHA21N80AEF-GE3 is TO-220-3 Full Pack.

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