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SIE812DF-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SIE812DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 40V 60A 10POLARPAK

SIE812DF-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 40V 60A 10POLARPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 10-PolarPAK® (L).

In Stock: 325

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8300 pF @ 20 V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (L)
Package / Case10-PolarPAK® (L)

Frequently Asked Questions

SIE812DF-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 40V 60A 10POLARPAK

The mounting type of SIE812DF-T1-GE3 is Surface Mount.

The operating temperature range of SIE812DF-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SIE812DF-T1-GE3 is 10-PolarPAK® (L).

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