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SIA468DJ-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SIA468DJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 37.8A PPAK SC70

SIA468DJ-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 37.8A PPAK SC70. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6.

In Stock: 947

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C37.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.4mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds1290 pF @ 15 V
FET Feature-
Power Dissipation (Max)19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6
Package / CasePowerPAK® SC-70-6

Frequently Asked Questions

SIA468DJ-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 37.8A PPAK SC70

The mounting type of SIA468DJ-T1-GE3 is Surface Mount.

The operating temperature range of SIA468DJ-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SIA468DJ-T1-GE3 is PowerPAK® SC-70-6.

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