P-CHANNEL 20-V (D-S) MOSFET POWE
SIA4263DJ-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. P-CHANNEL 20-V (D-S) MOSFET POWE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6.
In Stock: 50
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta), 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 52.2 nC @ 8 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1825 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.29W (Ta), 15.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Package / Case | PowerPAK® SC-70-6 |
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3J LIMITED
