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SI8819EDB-T2-E1 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SI8819EDB-T2-E1

Vishay Siliconix

MOSFET P-CH 12V 2.9A 4MICRO FOOT

SI8819EDB-T2-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 12V 2.9A 4MICRO FOOT. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-XFBGA.

In Stock: 441

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 3.7V
Rds On (Max) @ Id, Vgs80mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 6 V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-MICRO FOOT® (0.8x0.8)
Package / Case4-XFBGA

Frequently Asked Questions

SI8819EDB-T2-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 12V 2.9A 4MICRO FOOT

The mounting type of SI8819EDB-T2-E1 is Surface Mount.

The operating temperature range of SI8819EDB-T2-E1 is -55°C ~ 150°C (TJ).

The package type of SI8819EDB-T2-E1 is 4-XFBGA.

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