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SI8812DB-T2-E1 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SI8812DB-T2-E1

Vishay Siliconix

MOSFET N-CH 20V 4MICROFOOT

SI8812DB-T2-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 20V 4MICROFOOT. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-UFBGA.

In Stock: 1,800

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 8 V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-Microfoot
Package / Case4-UFBGA

Frequently Asked Questions

SI8812DB-T2-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 20V 4MICROFOOT

The mounting type of SI8812DB-T2-E1 is Surface Mount.

The operating temperature range of SI8812DB-T2-E1 is -55°C ~ 150°C (TJ).

The package type of SI8812DB-T2-E1 is 4-UFBGA.

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