MOSFET P-CH 8V 11.7A 4MICROFOOT
SI8429DB-T1-E1 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 8V 11.7A 4MICROFOOT. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-XFBGA, CSPBGA.
In Stock: 210
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8 V |
| Current - Continuous Drain (Id) @ 25°C | 11.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 5 V |
| Vgs (Max) | ±5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 4 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.77W (Ta), 6.25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-Microfoot |
| Package / Case | 4-XFBGA, CSPBGA |
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3J LIMITED
