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SI7434DP-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SI7434DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 250V 2.3A PPAK SO-8

SI7434DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 250V 2.3A PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8.

In Stock: 2,340

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs155mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

Frequently Asked Questions

SI7434DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 250V 2.3A PPAK SO-8

The mounting type of SI7434DP-T1-GE3 is Surface Mount.

The operating temperature range of SI7434DP-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI7434DP-T1-GE3 is PowerPAK® SO-8.

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