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SI7113DN-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SI7113DN-T1-E3

Vishay Siliconix

MOSFET P-CH 100V 13.2A PPAK

SI7113DN-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 100V 13.2A PPAK. Key specifications: mounting type Surface Mount, operating temperature -50°C ~ 150°C (TJ), package / case PowerPAK® 1212-8.

In Stock: 1,170

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C13.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs134mOhm @ 4A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1480 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

Frequently Asked Questions

SI7113DN-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 100V 13.2A PPAK

The mounting type of SI7113DN-T1-E3 is Surface Mount.

The operating temperature range of SI7113DN-T1-E3 is -50°C ~ 150°C (TJ).

The package type of SI7113DN-T1-E3 is PowerPAK® 1212-8.

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