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SI3458BDV-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SI3458BDV-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 4.1A 6TSOP

SI3458BDV-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 60V 4.1A 6TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

In Stock: 1,560

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 30 V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

Frequently Asked Questions

SI3458BDV-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 60V 4.1A 6TSOP

The mounting type of SI3458BDV-T1-GE3 is Surface Mount.

The operating temperature range of SI3458BDV-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI3458BDV-T1-GE3 is SOT-23-6 Thin, TSOT-23-6.

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