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SI1050X-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SI1050X-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 1.34A SC89-6

SI1050X-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 8V 1.34A SC89-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-563, SOT-666.

In Stock: 92

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8 V
Current - Continuous Drain (Id) @ 25°C1.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs86mOhm @ 1.34A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.6 nC @ 5 V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds585 pF @ 4 V
FET Feature-
Power Dissipation (Max)236mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89 (SOT-563F)
Package / CaseSOT-563, SOT-666

Frequently Asked Questions

SI1050X-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 8V 1.34A SC89-6

The mounting type of SI1050X-T1-GE3 is Surface Mount.

The operating temperature range of SI1050X-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI1050X-T1-GE3 is SOT-563, SOT-666.

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