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SI1021R-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SI1021R-T1-GE3

Vishay Siliconix

MOSFET P-CH 60V 190MA SC75A

SI1021R-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 60V 190MA SC75A. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SC-75, SOT-416.

In Stock: 8,040

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.7 nC @ 15 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds23 pF @ 25 V
FET Feature-
Power Dissipation (Max)250mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-75A
Package / CaseSC-75, SOT-416

Frequently Asked Questions

SI1021R-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 60V 190MA SC75A

The mounting type of SI1021R-T1-GE3 is Surface Mount.

The operating temperature range of SI1021R-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI1021R-T1-GE3 is SC-75, SOT-416.

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