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IRLD014PBF - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

IRLD014PBF

Vishay Siliconix

MOSFET N-CH 60V 1.7A 4DIP

IRLD014PBF is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 60V 1.7A 4DIP. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case 4-DIP (0.300", 7.62mm).

In Stock: 4,820

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs200mOhm @ 1A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.4 nC @ 5 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-HVMDIP
Package / Case4-DIP (0.300", 7.62mm)

Frequently Asked Questions

IRLD014PBF is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 60V 1.7A 4DIP

The mounting type of IRLD014PBF is Through Hole.

The operating temperature range of IRLD014PBF is -55°C ~ 175°C (TJ).

The package type of IRLD014PBF is 4-DIP (0.300", 7.62mm).

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