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IRFUC20PBF - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

IRFUC20PBF

Vishay Siliconix

MOSFET N-CH 600V 2A TO251AA

IRFUC20PBF is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 600V 2A TO251AA. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

In Stock: 9

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.4Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251AA
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Frequently Asked Questions

IRFUC20PBF is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 600V 2A TO251AA

The mounting type of IRFUC20PBF is Through Hole.

The operating temperature range of IRFUC20PBF is -55°C ~ 150°C (TJ).

The package type of IRFUC20PBF is TO-251-3 Short Leads, IPak, TO-251AA.

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