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IRFI630GPBF - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

IRFI630GPBF

Vishay Siliconix

MOSFET N-CH 200V 5.9A TO220-3

IRFI630GPBF is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 200V 5.9A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, Isolated Tab.

In Stock: 582

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 25 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

Frequently Asked Questions

IRFI630GPBF is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 200V 5.9A TO220-3

The mounting type of IRFI630GPBF is Through Hole.

The operating temperature range of IRFI630GPBF is -55°C ~ 150°C (TJ).

The package type of IRFI630GPBF is TO-220-3 Full Pack, Isolated Tab.

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