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IRFB11N50APBF - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

IRFB11N50APBF

Vishay Siliconix

MOSFET N-CH 500V 11A TO220AB

IRFB11N50APBF is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 500V 11A TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 1,367

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1423 pF @ 25 V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

Frequently Asked Questions

IRFB11N50APBF is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 500V 11A TO220AB

The mounting type of IRFB11N50APBF is Through Hole.

The operating temperature range of IRFB11N50APBF is -55°C ~ 150°C (TJ).

The package type of IRFB11N50APBF is TO-220-3.

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