Vishay General Semiconductor - Diodes Division
IGBT MOD 650V 201A 600W
VS-ETF150Y65N is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 650V 201A 600W. Key specifications: operating temperature 175°C (TJ), package / case Module, current - collector (ic) (max) 201 A, power - max 600 W.
In Stock: 8
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| IGBT Type | NPT |
| Configuration | Half Bridge Inverter |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 201 A |
| Power - Max | 600 W |
| Vce(on) (Max) @ Vge, Ic | 2.17V @ 15V, 150A |
| Current - Collector Cutoff (Max) | - |
| Input Capacitance (Cies) @ Vce | - |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | - |
| Package / Case | Module |
| Supplier Device Package | Module |
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