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B125C800G-E4/51 - Vishay General Semiconductor - Diodes Division - Diodes - Bridge Rectifiers

B125C800G-E4/51

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1P 200V 900MA WOG

B125C800G-E4/51 is a Diodes - Bridge Rectifiers manufactured by Vishay General Semiconductor - Diodes Division. BRIDGE RECT 1P 200V 900MA WOG. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 125°C (TJ), package / case 4-Circular, WOG.

In Stock: 1,327

Product Attributes

AttributeValue
Product StatusActive
Diode TypeSingle Phase
TechnologyStandard
Voltage - Peak Reverse (Max)200 V
Current - Average Rectified (Io)900 mA
Voltage - Forward (Vf) (Max) @ If1 V @ 900 mA
Current - Reverse Leakage @ Vr10 µA @ 200 V
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeThrough Hole
Package / Case4-Circular, WOG
Supplier Device PackageWOG

Frequently Asked Questions

B125C800G-E4/51 is a Diodes - Bridge Rectifiers manufactured by Vishay General Semiconductor - Diodes Division. BRIDGE RECT 1P 200V 900MA WOG

The mounting type of B125C800G-E4/51 is Through Hole.

The operating temperature range of B125C800G-E4/51 is -40°C ~ 125°C (TJ).

The package type of B125C800G-E4/51 is 4-Circular, WOG.

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