SICFET P-CH 1200V 28.8A D2PAK-7
UF3C120080B7S is a Transistors - FETs, MOSFETs - Single manufactured by UnitedSiC. SICFET P-CH 1200V 28.8A D2PAK-7. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.
In Stock: 1,811
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Cascode SiCJFET) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 28.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 12 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 754 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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3J LIMITED
