GANFET N-CH 650V 3.6A 3PQFN
TP65H480G4JSG-TR is a Transistors - FETs, MOSFETs - Single manufactured by Transphorm. GANFET N-CH 650V 3.6A 3PQFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-SMD, Flat Lead.
In Stock: 250
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V |
| Rds On (Max) @ Id, Vgs | 560mOhm @ 3.4A, 8V |
| Vgs(th) (Max) @ Id | 2.8V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 8 V |
| Vgs (Max) | ±18V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 13.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PQFN (5x6) |
| Package / Case | 3-SMD, Flat Lead |
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3J LIMITED
