Toshiba Semiconductor and Storage
MOSFET N-CH 100V 160A TO220SM
XK1R9F10QB,LXGQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 100V 160A TO220SM. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
In Stock: 940
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.92mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 184 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11500 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-220SM(W) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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