Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 30MO
TW030N120C,S1F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. G3 1200V SIC-MOSFET TO-247 30MO. Key specifications: mounting type Through Hole, operating temperature 175°C, package / case TO-247-3.
In Stock: 175
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 30A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 13mA |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 18 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2925 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 249W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
Submit your RFQ for TW030N120C,S1F and get a quote within 24 hours.
3J LIMITED
