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TTC1949-GR,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single

TTC1949-GR,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.5A SMINI

TTC1949-GR,LF is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS NPN 50V 0.5A SMINI. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 500 mA.

In Stock: 5,844

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA, 1V
Power - Max200 mW
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageS-Mini

Frequently Asked Questions

TTC1949-GR,LF is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS NPN 50V 0.5A SMINI

The mounting type of TTC1949-GR,LF is Surface Mount.

The operating temperature range of TTC1949-GR,LF is 150°C (TJ).

The package type of TTC1949-GR,LF is TO-236-3, SC-59, SOT-23-3.

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