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TPH8R008NH,L1Q - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single

TPH8R008NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 34A 8SOP

TPH8R008NH,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 80V 34A 8SOP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerVDFN.

In Stock: 5,000

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 40 V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 61W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

Frequently Asked Questions

TPH8R008NH,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 80V 34A 8SOP

The mounting type of TPH8R008NH,L1Q is Surface Mount.

The operating temperature range of TPH8R008NH,L1Q is 150°C (TJ).

The package type of TPH8R008NH,L1Q is 8-PowerVDFN.

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