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TPH7R006PL,L1Q - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single

TPH7R006PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 60A 8SOP

TPH7R006PL,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 60V 60A 8SOP. Key specifications: mounting type Surface Mount, operating temperature 175°C (TJ), package / case 8-PowerVDFN.

In Stock: 4,714

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs13.5mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1875 pF @ 30 V
FET Feature-
Power Dissipation (Max)81W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

Frequently Asked Questions

TPH7R006PL,L1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 60V 60A 8SOP

The mounting type of TPH7R006PL,L1Q is Surface Mount.

The operating temperature range of TPH7R006PL,L1Q is 175°C (TJ).

The package type of TPH7R006PL,L1Q is 8-PowerVDFN.

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