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TPH2R306NH1,LQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single

TPH2R306NH1,LQ

Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

TPH2R306NH1,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. UMOS9 SOP-ADV(N) PD=170W F=1MHZ. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case 8-PowerTDFN.

In Stock: 4,980

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C136A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6.5V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6100 pF @ 30 V
FET Feature-
Power Dissipation (Max)800mW (Ta), 170W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5.75)
Package / Case8-PowerTDFN

Frequently Asked Questions

TPH2R306NH1,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. UMOS9 SOP-ADV(N) PD=170W F=1MHZ

The mounting type of TPH2R306NH1,LQ is Surface Mount.

The operating temperature range of TPH2R306NH1,LQ is 150°C.

The package type of TPH2R306NH1,LQ is 8-PowerTDFN.

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